Semiconductor module

ABSTRACT

A semiconductor module comprises a mounting board. A plurality of power switching device chips are mounted on the mounting board by flip-chip bonding. The chip has an upper surface and a lower surface and is configured to face the upper surface toward the mounting board. A drive IC chip is mounted on the mounting board by flip-chip bonding. The drive IC chip is operative to drive gates of transistors formed in the plurality of power switching device chips. A plurality of heat sink members are located on the lower surfaces of the plurality of power switching device chips, respectively. A resinous member is provided to seal the plurality of power switching device chips and the drive IC chip in a single package.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based on and claims the benefit of priority fromprior Japanese Patent Application No. 2004-253276, filed on Aug. 31,2004, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor module such as amulti-chip module.

2. Description of the Related Art

A DC-DC converter is a device that converts a certain voltage DC currentinto a different voltage DC current. The DC-DC converter is highlyefficient and can be downsized. Therefore, it has been utilized as apower source incorporated in small electronic instruments (for example,information communications instruments such as notebook personalcomputers and mobile phones).

In the information communications instruments such as PCs, a CPU is finepatterned and sped up to provide an advanced low-voltage/large-currentpower source (drive power source). A supply voltage for the CPU ismainly 5.0 (V) or 3.3 (V) in the year 1995. In recent years, however,the debut of high-performance CPUs with clock frequencies over 1 GHzrequires a voltage lowered down to 1.5 (V) and a current in a class of100 (A). In addition, in order to respond to the operation speed of theCPU, the power source circuit is required to have an operation frequencyof 1 MHz or higher. Therefore, it becomes also important to elevate theswitching speed of transistors contained in the power source circuit.

The low-voltage/large-current power source has changed the forms of theconventional power source system. In a form of supplying power from asingle power source to a plurality of circuits, even slight parasiticimpedance on a wire causes a voltage drop. Accordingly, a voltagerequired for the circuit is not supplied, which causes erroneousoperations. At present the form is therefore transferred to another inwhich power sources are distributed to locate the power sourcescorresponding to the respective loads close to the loads.

As for the notebook PC, for example, it comprises loads such as a CPU, aLCD screen and a hard disc. The power sources (that is, DC-DCconverters) corresponding to the respective loads are located near theloads.

The conventional high-power DC-DC converters include a synchronouscommutation non-insulating step-down converter, which comprises anN-channel type power MOSFET (Metal Oxide Semiconductor Field EffectTransistor), an SBD (Schottky Barrier Diode), a PWM (Pulse widthModulation) control IC and others. These components are individuallypackaged and the packaged components are mounted on a printed circuitboard.

Normally, a power switching device such as the power MOSFET used in thepower source circuit radiates heat caused from power losses due toon-resistance and switching. Therefore, it is required to attach a heatsink plate to the power MOSFET chip to dissipate the heat to outside thechip. A high-frequency multi-chip module structured to include a heatsink plate attached to a semiconductor chip is disclosed in JP-A11-45976 (FIG. 1).

SUMMARY OF THE INVENTION

In an aspect the present invention provides a semiconductor module,which comprises a mounting board; a plurality of power switching devicechips each having an upper surface and a lower surface and mounted onthe mounting board by flip-chip bonding with the upper surface facedtoward the mounting board; a drive IC chip mounted on the mounting boardby flip-chip bonding and operative to drive gates of transistors formedin the plurality of power switching device chips; a plurality of heatsink members located on the lower surfaces of the plurality of powerswitching device chips; and a resinous member provided to seal theplurality of power switching device chips and the drive IC chip in asingle package.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a semiconductor module according to a firstembodiment;

FIG. 2 is a cross-sectional view taken along A1-A2 line in FIG. 1;

FIG. 3 is a cross-sectional view taken along B1-B2 line 10: in FIG. 1;

FIG. 4 is a cross-sectional view of part of a power MOS chip provided inthe first embodiment;

FIG. 5 is a circuit diagram of a DC-DC converter according to the firstembodiment;

FIG. 6 is a timing chart of signals fed into power MOS chips 5, 7 inFIG. 5;

FIG. 7 is a plan view of a modification of the semiconductor moduleaccording to the first embodiment:

FIG. 8 is a plan view of a semiconductor module according to a secondembodiment;

FIG. 9 is a cross-sectional view taken along C1-C2 line in FIG. 8;

FIG. 10 is a perspective view of a heat sink member according to thesecond embodiment;

FIG. 11 is a perspective view of a modification of the heat sink memberaccording to the second embodiment;

FIG. 12 is a cross-sectional view of part of a low-potential power MOSchip provided in a third embodiment;

FIG. 13 is a cross-sectional view of a semiconductor module in a firstaspect according to a fourth embodiment;

FIG. 14 is a cross-sectional view of a semiconductor module in a secondaspect according to the fourth embodiment;

FIG. 15 is a cross-sectional view of a semiconductor module in a thirdaspect according to the fourth embodiment:

FIG. 16 is across-sectional view of a semiconductor module in a fourthaspect according to the fourth embodiment;

FIG. 17 is a plan view of a semiconductor module according to a fifthembodiment;

FIG. 18 is a cross-sectional view taken along D1-D2 line in FIG. 17;

FIG. 19 is a first process diagram illustrative of a method offabricating the semiconductor module according to the fifth embodiment;

FIG. 20 is a second process diagram of the same method;

FIG. 21 is a third process diagram of the same method;

FIG. 22 is a fourth process diagram of the same method;

FIG. 23 is a fifth process diagram of the same method;

FIG. 24 is a sixth process diagram of the same method;

FIG. 25 is a graph exemplifying a temperature profile on solder reflowheating during fabrication of the semiconductor module according to thefifth embodiment;

FIG. 26 is a cross-sectional view of a semiconductor module according toan embodiment;

FIG. 27 is a cross-sectional view of a semiconductor module according toanother embodiment;

FIG. 28 is a cross-sectional view of a semiconductor module according toyet another embodiment;

FIG. 29 is a bottom view of a semiconductor module according to a sixthembodiment;

FIG. 30 is a bottom view of a semiconductor module according to thefifth embodiment;

FIG. 31 is a cross-sectional view of a mounting board and so forthhoused in a mold prior to resin sealing;

FIG. 32 shows the mounting board deflected:

FIG. 33 is a bottom view of a modification of the semiconductor moduleaccording to the sixth embodiment;

FIG. 34 is a plan view of an upper surface of a power MOS chip providedin a semiconductor module according to a seventh embodiment;

FIG. 35 is a plan view of a semiconductor module according to an eighthembodiment;

FIG. 36 is a cross-sectional view taken along E1-E2 line in FIG. 35;

FIG. 37 is a cross-sectional view taken along F1-F2 line in FIG. 35;

FIG. 38 is a cross-sectional view of part of a power MOS chip 5according to the eighth embodiment;

FIG. 39 is a cross-sectional view of part of a power MOS chip 7according to the eighth embodiment;

FIG. 40 is across-sectional view of a semiconductor module according toa ninth embodiment;

FIG. 41 is a cross-sectional view of part of a power MOS chip providedin the ninth embodiment;

FIG. 42 is a plan view of a semiconductor module according to a tenthembodiment;

FIG. 43 is a cross-sectional view taken along G1-G2 line in FIG. 42;

FIG. 44 is a circuit diagram of a semiconductor module according to thetenth embodiment:

FIG. 45 shows external terminals related to condensers on thesemiconductor module according to the tenth embodiment;

FIG. 46 is a plan view of a semiconductor module according to aneleventh embodiment;

FIG. 47 is a cross-sectional view taken along H1-H2 line in FIG. 46;

FIG. 48 is a bottom view of the semiconductor module in FIG. 46;

FIG. 49 is a plan view of a semiconductor module according to a twelfthembodiment;

FIG. 50 is a circuit diagram of a DC-DC converter containing thesemiconductor module according to the twelfth embodiment;

FIG. 51 is a circuit diagram of a speaker driver according to athirteenth embodiment;

FIG. 52 is a plan view of a semiconductor module (half-bridged)contained in the speaker driver of FIG. 51; and

FIG. 53 is a plan view of a semiconductor module (full-bridged)contained in the speaker driver of FIG. 51.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will now be described withreference to the drawings. In the figures illustrative of theembodiments, the parts same as or similar to those denoted with thereference numerals in the figure once described are given the samereference numerals and omitted from the following description. Asemiconductor module according to the embodiment is a multi-chip module,which includes a power MOS chip and a drive IC chip both sealed in asingle package. This module serves as part of a DC-DC converter.

The power MOS chip comprises an FET having a gate insulator containing asilicon oxide while the present invention is not limited to this butalso applicable to a power MIS chip, which comprises an FET having aninsulator (such as a high dielectric) other than the silicon oxide. Thepower NOS chip and the power MIS chip are also referred to as powerswitching devices.

First Embodiment

(Structure of Semiconductor Module)

A structure of a semiconductor module according to a first embodiment isdescribed with reference to FIGS. 1-3. FIG. 1 is a plan view of thesemiconductor module according to the first embodiment. FIG. 2 is across-sectional view taken along A1-A2 line in FIG. 1. FIG. 3 is across-sectional view taken along B1-B2 line in FIG. 1.

The semiconductor module 1 comprises amounting board (such as a printedcircuit board) 3, two power MOS chips 5, 7 (an example of the powerswitching devices) and a drive IC chip 9 all mounted on the mountingboard. The drive IC chip 9 is a chip operative to drive gates of MOSFETsformed in the power MOS chips 5, 7. The power MOS chip 5 and the driveIC chip 9 are shaped square while the power MOS chip 7 is shapedrectangular. Thus, the chips 5, 7, 9 can be arranged efficiently on thesquare mounting board 3.

FIG. 4 is a cross-sectional view of part of the power MOS chip 5, 7. Thechip 5 and 7 are structured with a number of vertical MOSFETs connectedin parallel. In detail, the chip 5, and 7 comprise an n⁺-type siliconsubstrate 13 having an n-type epitaxial layer 11 thereon. An upper layerlocated above the epitaxial layer 11 is a p-type body region 15. Anumber of trench gates 17 are formed through the body region 15 in theepitaxial layer 11. A gate oxide film 19 is formed around the trenchgate 17.

An n⁺-type source region 21 is formed in the upper surface of the bodyregion 15. An interlayer insulator 23 is formed covering the trench gate17 and the source region 21. Contact holes are formed through theinterlayer insulator 23 such that a source electrode 24 is connected tothe body region 15 and the source region 21 via the contact holes. Thesilicon substrate 13 serves as an n⁺-type drain region. A drainelectrode 43 is formed entirely over the lower surface of the siliconsubstrate 13.

As shown in FIGS. 1-3, the mounting board 3 includes a square resinplate 25. The square resin plate 25 has four sides provided with anumber of external terminals 27 at a certain 20, pitch. The terminals 27has a semi-cylindrical shape so that edges of the mounting board 3 arerecessed at the terminals 27. Wires 29 are formed on both surfaces ofthe resin plate 25 and connected to the external terminals 27. Theexternal terminals 27 and the wires 29 are composed of a conductor suchas copper foil.

Solder resists 31 are formed on both surfaces of the resin plate 25covering the wires 29. The solder resists 31 do not cover the externalterminals 27 but have apertures through the wires 29 at locationscorresponding to electrodes 32 a, 32 b. A connection member 33 such assolder is screen-printed on the electrodes 32 a, 32 b.

A number of through-holes are formed through the resin plate 25. Aconductive film 35 such as copper is formed, for example, plated on theside of the through-hole. The conductive film 35 is operative toelectrically connect between the wires 29 on both surfaces of the resinplate 25. A resin 37 is filled in a space surrounded by the conductivefilm 35. Instead of the resin 37, a resin containing a metal powder suchas copper may be filled to lower the electric resistance.

The power MOS chips 5, 7 and the drive IC chip 9 are mounted on themounting board 3 by flip-chip bonding. In detail, a gate electrode pad39 and a source electrode pad 41 are formed on the upper surface of thepower MOS chip 5, 7 and a drain electrode pad 43 is formed on the lowersurface thereof. The electrode pads 39, 41 are formed in an upper layerof the source electrode 24 shown in FIG. 4. Bump electrodes may beformed on the electrode pads 39, 41. The gate electrode pad 39 iscommonly connected with the trench gates 17. The source electrode pad 41is connected with the source electrode 24.

The gate electrode pad 39 and the source electrode pad 41 on the powerMOS chips 5, 7 and the electrode pad 49 on the drive IC chip 9 aresoldered to the electrode 32 a on the mounting board 3 with theconnection member 33. A space between the chips 5, 7, or 9 and themounting board 3 is filled with an underfill material 51.

A square heats sink member 53 is arranged on the lower surface 47 (FIG.4) of the power MOS chip 5 so as to cover the power MOS chip 5.Similarly, a rectangular heat sink member 55 is arranged on the lowersurface 47 (FIG. 4) of the power MOS chip 7 so as to cover the power MOSchip 7. The heat sink members 53 and 55 comprise respective singlemetallic heat sink plates.

The heat sink members 53 and 55 have a side partly serving as a terminal59. The heat sink member 53 is provided with the terminal 59 on one offour sides. To the contrary, the heat sink member 55 is provided withthe terminals 59 on two opposite longer sides of four sides (that is,two opposite longer sides of the rectangular chip 7). The heat sinkmembers 53 and 55 are folded at the terminal 59 to form a step, which issoldered to the electrode 32 b on the mounting board 3 by the connectionmember 33. Therefore, the heat sink members 53 and 55 are fixed to theelectrode 32 b on the mounting board 3 and electrically connected to thewire 29 on the mounting board 3.

The heat sink member 53 has only one terminal 59 and is fixed at onelocation accordingly. On the other hand, the heat sink member 55 has twoterminals 59 and is fixed at two locations accordingly. This is arequirement from the electric circuit that contains the heat sinkmembers 53, 55. Therefore, depending on the requirement from theelectric circuit, if two terminals 59 are formed on the heat sink member53, the heat sink member 53 is fixed at two locations. If the heat sinkmember 53 is fixed at one location, parallelism of the heat sink memberto the mounting board may not be maintained. Measures for such the casewill be described in a second embodiment.

The heat sink members 53 and 55 each has a flat portion other than theterminal 59, which opposes the lower surface of the power MOS chip 5, 7and serves as a heat sink. At the flat portion, the heat sink members 53and 55 are soldered to the drain electrode 43 on the lower surface ofthe power MOS chip 5, 7 via a conductive connection member 57.Therefore, each heat sink member is electrically connected to the drainelectrode on the lower surface of the corresponding one of the power MOSchips (or to the source electrode if the chip has the source electrodeon the lower surface thereof).

The heat sink members 53 and 55: (1) cover the power MOS chips 5, 7; (2)have the terminals 59 connected to the electrode 32 b, and (3) have thesame height at the heat sink members 53, 55 (that is, are coplanar).Therefore, the size of the step of the heat sink members 53 and 55 isdetermined in consideration of a thickness of the connection member 57,thickness of the power MOS chip 5, 7, a height of the electrode pad 39,41, a height of the connection member 33, and a height of the electrode32 a, 32 b.

The heat sink members 53, 55 serves as a heat sink as well as a wire.Accordingly, copper is employed as a material because it has a thermallyand electrically excellent conductivity. Alternatively, aluminum mayalso be employed because aluminum is higher in electric resistance butlighter and better in workability than copper. An iron-based material(such as a 42 alloy) may also be employed as a material of the heat sinkmembers 53, 55. This material has a thermal expansion coefficient closerto that of the material of the power MOS chip 5, 7 and prevents the heatsink members 53, 55 from suffering fatigue due to the thermal expansion.

When aluminum or the iron-based material is employed as the heat sinkmembers 53, 55, vapor deposition, thermal spray plating or plating maybe applied to form a metal layer (such as copper, gold, silver, andnickel) or an alloy layer (such as solder, and silver wax) on theportion connected to the connection member 33, (that is, the terminal59), and the portion connected to the connection member 57, of the heatsink members 53, 55. Formation of such the layer achieves excellentconnectivity.

The materials and thicknesses of the heat sink members 53, 55 areusually same but may be made different for the reasons such as adifference between the amounts of heat radiation from the power MOSchips 5, 7.

If the thickness of the heat sink members 53, 55 is too thin, thetemperature at the heat sink members 53, 55 sharply rises undesirably.Therefore, a guide of the thickness of the heat sink members 53, 55 ispreferably 100 μm or thicker (more preferably 200 μm or thicker).

The heat sink members 53 and 55 covers the lower surface of thecorresponding power MOS chip 5, 7 entirely to improve the heat radiationand lower the electric resistance. The heat sink members 53 and 55 mayexpose the lower surface of the power MOS chip 5 and 7 partly instead ofcovering it entirely.

A resinous member 61 is fixed on the mounting board 3 to seal the powerMOS chips 5, 7 and the drive IC chip 9 in a single package. The heatsink members 53 and 55 each has one surface 63 facing the lower surfaceof the corresponding power MOS chip 5 or 7 and the other surface 65located opposite to the one surface. The other surface 65 is exposed tooutside the semiconductor module 1. Therefore, all the heat sink membersare exposed to outside the semiconductor module 1.

(Circuitry and Operation of DC-DC Converter)

The following description is given to the circuitry and operation of aDC-DC converter that contains the semiconductor module 1. FIG. 5 is acircuit diagram of the DC-DC converter 67. The DC-DC converter 67 is ofthe synchronous commutation non-insulating step-down type. This is themost possible circuit to reduce the power loss and enhance theconversion efficiency.

The power MOS chip (an element on the control side) 5 at a higherpotential and the power MOS chip (an element on the synchronouscommutation side) 7 at a lower potential both employ an N-channel MOSFEThaving a lower on-resistance and a lower gate capacitance. The power MOSchip 7 is connected in parallel with an SBD (Shottky Barrier Diode) 69having a lower VF. The power MOS chips 5 and 7 have gate terminalsconnected to the drive IC chip 9 for driving the gates.

The gates of the power MOS chips 5 and 7 are normally driven under thePWM (Pulse Width Modulation) control. The PWM control is a controlscheme to stabilize the DC output voltage from a switching power source.Namely, the output voltage is controlled by varying a ratio of the ONtime to the OFF time of the switching transistor (power MOS chip 5).When the output voltage lowers (elevates), the ON time is elongated(shortened) to keep a constant voltage. The gates of the power MOS chips5 and 7 may also be driven under the PPM (Pulse Frequency Modulation)control. The PFM control is a control scheme to control the outputvoltage by varying the switching frequency while maintaining the ON timeof the switching transistor (power MOS chip 5) unchanged. When theoutput voltage lowers (elevates), the switching frequency is increased(decreased) to keep a constant voltage.

An inductor 73 and a condenser 73 are connected to the DC-DC converter67 on the output side. A load such as a CPU 75 is connected across theoutput of the DC-DC converter 67.

The basic operation of the DC-DC converter 67 is described next withreference to FIGS. 5 and 6. FIG. 6 is a timing chart of signals fed intothe power MOS chips 5 and 7. If an input voltage VIN is 24 V, it isconverted at the converter 67 into 1.5 V, for example, which is thensupplied to the CPU 75.

At time t1, while the MOSFET (M2) in the power MOS chip 7 is kept off,the MOSFET (M1) in the power MOS chip 5 is turned on. As a result,application of the input voltage VIN causes a current shown by the arrow(1) to flow to supply power to the CPU 75 through the inductor 71. Attime t2, the MOSFET (M1) is turned off to halt supplying power to theCPU 75 through 10; application of the input voltage VIN. Instead, thepower accumulated in the inductor 71 causes a current shown by the arrow(2) to commutate via the SED 69 to supply power to the CPU 75.

After elapse of a certain dead time DT set for prevention of throughcurrent from passing through the MOSFET (M1) and the MOSFET (M2), theMOSFET (M2) is turned on at time t3. The MOSFET (M2) is lower inresistance than the SBD 69 so that the current generated from the poweraccumulated in the inductor 71 communicates through not the SBD 69 butthe MOSFET (M2) as shown by the arrow (3) to supply power to the CPU 75.The condenser 73 is employed to smooth the output voltage waveform. TheDC-DC converter can work without the power MOS chip 7 or the MOSFET(M2).

The following description is given to the reason why the MOSFET (M2) isprovided. At time t2, the current shown by the arrow (2) flows throughthe SBD 69. The flow of the current through the SBD 69 causes a voltagedrop, which causes a corresponding loss in power supplied to the CPU 75.A MOSFET can be made smaller in voltage drop than an SBD. Therefore, thecurrent is controlled to flow via the SBD 69 during the dead time DT andflow via the MOSFET (M2) after elapse of the dead time DT to supplypower to the CPU 75 efficiently.

(Primary Effects of First Embodiment)

A primary effect of the first embodiment is described next. The firstembodiment is possible to achieve a reduction of area in mounting space,a reduction in wire impedance, and an improvement in heat radiation fora semiconductor device containing the semiconductor module (such as theDC-DC converter 67), which are described below in detail.

A conventional DC-DC converter comprises components such as a power MOSchip, a drive IC chip and an SBD (Schottky Barrier Diode), which areindividually packaged, and these packaged components are attached to aprinted circuit board. In recent years, lowering the voltage andincreasing the current have proceeded rapidly for PCs and so forth. Inthe DC-DC converter with such the structure, there are problemsassociated with an increase in mounting space, an increase in wireimpedance and difficulty in heat radiation.

The increase in mounting space is described first. A current capacityrequired in the conventional DC-DC converter may exceed a rated currentof a single MOSFET (one power MOS chip). In such the case, a pluralityof power MOS chips are connected in parallel to provide the currentcapacity required. Therefore, the number of the power MOS chips must beincreased to support the need for increasing the current, resulting inthe increase in mounting space, which prevents the DC-DC converter frombeing downsized as a problem.

The increase in wire impedance is described next. The increased mountingspace enlarges the area of the mounting board, which inevitablyelongates the wire length resulting in increases in resistance andinductance. The increase in resistance causes a voltage drop, whichcauses a lack in voltage applied across a load and leads to erroneousoperations. The increase in inductance interferes with the achievementof high speed and high frequency properties and increases ringing, whichmay also cause erroneous operations.

Finally, the problem associated with the difficulty in heat radiation isdescribed. A load such as a CPU has a large amount of heat radiation andaccordingly requires attachment of a large heat sink member to the loaditself. Therefore, in the vicinity of the load, it is difficult toensure a space to attach the heat sink member for the power MOS chip. Ifno heat sink member is attached to the power MOS chip, the number of thepower MOS chips is increased to reduce the MOSFET resistance to avoid anexcessive power loss in the power MOS chip. The increased number of thepower MOS chips, however, causes problems associated with the increasein mounting space and the increase in wire impedance.

In the semiconductor module 1 according to the first embodiment, thepower MOS chips 5, 7 and the drive IC chip 9 are encapsulated in asingle package. In a word, these chips are mounted on an identicalsurrounder. Therefore, the mounting space of the DC-DC converter 67 canbe reduced (downsized).

Downsizing improves the mounting density and accordingly shortens thewire between elements. Thus, the wire impedance on the DC-DC converter67 can be reduced. Accordingly, the DC-DC converter 67 can operate at ahigh speed and a high frequency.

The heat sink members 53 and 55 can dissipate the heat generated fromthe power MOS chip 5 and 7 efficiently. In particular, as the othersurface 65 of the heat sink members 53 and 55 is exposed to outside thesemiconductor module 1, the heat radiation can be further improved. Inthe first embodiment, the power MOS chip 5, 7 is mounted by flip-chipbonding and the heat sink members 53, 55 is located on the lower surfaceof the power MOS chip 5, 7. Thus, the heat sink members 53, 55 can belocated without increasing the mounting area. In addition, even if thepower MOS chip 5, 7 is located close to the CPU, it does not preventattachment of the heat sink member to the CPU. Further, the heat sinkmembers 53 and 55 each is attached to the power MOS chip 5, 7 by theconnection member 57. As the connection member 57 is excellent inthermal conductivity, the heat generated from the chip 5 and 7 cantransfer to the heat sink member 53, 55 quickly via the connectionmember 57. Also from this viewpoint, heat can be dissipated efficiently.

No heat sink member is attached to the drive IC chip 9. In a word, thedrive IC chip 9 is not covered with the heat sink member as is the powerMOS chip 5, 7. In order to dissipate the heat generated from the driveIC chip 9 efficiently, however, a heat sink member may be disposed onthe lower surface of the drive IC chip 9.

The first embodiment also exerts the following effect. The heat sinkmember 53, 55 also serves as a wire that connects the drain electrode 43on the power MOS chip 5, 7 to the wire 29 on the mounting board 3. Theheat sink members 53 and 55 each has a wider current path andaccordingly serves as a wire with less parasitic resistance andparasitic inductance.

(Modification of First Embodiment)

FIG. 7 is a plan view of a modification of the semiconductor module 1according to the first embodiment, corresponding to FIG. 1. The powerMOS chip 7 configures a low-potential circuit while the power MOS chip 5configures a high-potential circuit. The power MOS chip 7 is split intothree chips 7-1, 7-2, 7-3. At this point, the semiconductor module 1 inFIG. 7 differs from that in FIG. 1. The heat sink member 55 has regionscorresponding to the chips 7-1, 7-2, 7-3, which serve as heat sinkmembers for the respective chips. Therefore, it can be said in this casethat a plurality of heat sink members are linked with each other toconfigure a single heat sink plate (heat sink member 55).

The power MOS chip 7 in FIG. 1 has relatively large dimensions with alarge thermal expansion efficiency and a large thermal stress. In themodification of FIG. 7, the power MOS chip 7 is split into threerelatively small chips 7-1, 7-2, 7-3 to ensure the current capacity andreduce the thermal stress. A plurality of power MOS chips 7-1, 7-2, 7-3may be arranged for feeding a large current to the semiconductor module1 instead of reducing the thermal stress.

In the fifth embodiment, of the low-potential circuit and thehigh-potential circuit, the low-potential circuit includes three powerMOS chips. It is sufficient that, however, at least one of thelow-potential circuit and the high-potential circuit includes aplurality of power MOS chips. The number of chips is not limited tothree but may be two or more.

Second Embodiment

FIG. 8 is a plan view of a semiconductor module 1 according to a secondembodiment. FIG. 9 is a cross-sectional view taken along C1-C2 line inFIG. 8. FIGS. 8 and 9 are employed to describe the second embodimentabout differences from the first embodiment.

In the second embodiment, the heat sink member 53 covering the power MOSchip 5 extends over the drive IC chip 9 so as to cover the drive IC chip9. The power MOS chip 5 and the drive IC chip 9 share the heat sinkmember 53. A separate heat sink member for covering the drive IC chip 9may be arranged aside from the heat sink member 53. In comparison withsuch the case, the heat sink member can be given a larger area, whichimproves the heat radiation by the extent.

The drive IC chip 9 has a lower surface 77 kept at the ground potential,which differs from the potential on the drain electrode 43 of the powerMOS chip 5. Therefore, the heat sink member 53 is insulated from thedrive IC chip 9 via a resinous member 61. In a word, the heat sinkmember 53 is insulated from the drive IC chip 9 and extends over thedrive IC chip 9.

There is a possible inverted structure. In this structure, the heat sinkmember 53 is connected to the lower surface 77 of the drive IC chip 9 bya connection member, and the heat sink member 53 is insulated from thepower MOS chip 5 via the resinous member 61. It is easier for heat toconduct via the conductive connection member 57 than via the resin. Thepower MOB chip 5 has a larger amount of heat radiation than the drive ICchip 9 has. Therefore, in the second embodiment, the power MOS chip 5 isconnected to the heat sink member 53 via the connection member 57.

The above connection makes the potential on the heat sink member 53equal to the drain potential on the power MOS chip 5. Accordingly, thedrive IC chip 9 is shielded by the heat sink member 53 held at the fixedpotential. The lower surface 77 of the drive IC chip 9 is kept at theground potential. In a high-frequency DC-DC converter, a high frequencyfluctuates the ground potential to erroneously operate the drive IC chip9 possibly. In the second embodiment, as the drive IC chip 9 is shieldedby the heat sink member 53 kept at the fixed potential, it is possibleto prevent the high frequency from causing fluctuation of the groundpotential.

There is no terminal of the heat sink member between the chips 5 and 7.Thus, a distance between the chips 5 and 7 is relatively short.Accordingly, during formation of the connection member 57 on the lowersurface of the chip 5, the connection member 57 may possibly extend andbring the connection member 57 into contact with the chip 9. Therefore,in the second embodiment, the drive IC chip 9 is polished thin to makethe thickness of the drive IC chip 9 (for example, 140 μm) thinner thanthe thickness of the power MOS chip 5 (for example, 150 μm). This iseffective to separate the lower surfaces of the chips 5, 7 from eachother without increasing the flat area between the chips 5, 7.

In the second embodiment, as the heat sink member 53 extends over thedrive IC chip 9, the heat sink member 53 is shaped rectangular. FIG. 10is a perspective view of the heat sink member 53 according to the secondembodiment. The heat sink member 53 is provided with a single terminal59 and fixed on the mounting board 3 at one location. The terminal 59 isformed on part of a longer side of the heat sink member 53. Therefore,the heat sink member 53 is held unstable, and the parallelism of theheat sink member 53 to the mounting board 3 may not be keptoccasionally. Arrangement of another terminal can keep the parallelismthough such the terminal may not be required on the electric circuit.

In such the case, the modification of the heat sink member 53 accordingto the second embodiment shown in FIG. 11 is possible to keep theparallelism of the heat sink member 53. The heat sink member 53 includestwo folded portions 79, which are formed by folding two opposite shortersides thereof. The folded portions 79 are mounted on the solder resist31 on the mounting board 3 to keep the parallelism of the heat sinkmember 53 having only one terminal 59.

Third Embodiment

Different from the preceding embodiment, a third embodiment comprises alow-potential power MOS chip with a built-in SBD. FIG. 12 is across-sectional view of part of the low-potential power MOS chip 7 aprovided in the third embodiment, corresponding to the power MOS chip 7in FIG. 4. An SBD 69 is formed at a certain distance away from an endterminal 81 of a MOSFET formation region. The certain distance means adistance that prevents the MOSFET and the SBD from interfering with eachother.

The SBD 69 includes an epitaxial layer 11 and a metal layer 83 such asaluminum formed thereon. When the epitaxial layer 11 makes contact withthe metal layer 83, a Schottky barrier is made at the contact portion.The SBD 69 is connected in parallel with the MOSFET in the power MOSchip 7. A p-n junction diode may be employed instead of the SBD 69.

When the power MOS chip 7 a with the built-in SED 69 is employed in thesemiconductor module as in the third embodiment, the number ofcomponents can be made smaller than when a chip of the SBD 69 isemployed. This makes it possible to shorten the time for fabricating thesemiconductor module and downsize the semiconductor module. In addition,no wire is required to connect the power MOS chip 7 a with the chip ofthe SBD 69. Accordingly, it is possible to remove the impedanceassociated with such the wire and provide the semiconductor module withan excellent high-speed performance.

Fourth Embodiment

In the semiconductor module 1 according to the first embodiment shown inFIG. 3, the heat sink members 53, 55 are both exposed to outside thesemiconductor module 1. When the heat sink members 53, 55 are exposed tooutside the semiconductor module 1, the heat radiation effect can beimproved while it is required to prevent the power MOS chips 5, 7 fromshort-circuiting with each other and with external. A semiconductormodule according to a fourth embodiment is mainly characterized by ashort circuit protective structure.

FIGS. 13-16 are cross-sectional views of a semiconductor module in firstthrough fourth aspects according to the fourth embodiment, correspondingto FIG. 3. In the semiconductor module 1 of the first aspect shown inFIG. 13, the heat sink members 53, 55 are covered with the resinousmember 61. In a word, a plurality of heat sink members are all coveredwith the resinous member 61 to achieve the short circuit protection.When the amounts of heat radiation from the power MOS chips 5, 7 arerelatively small, the chips 5, 7 can operate with no problem even if theheat sink members 53, 55 are covered with the resinous member 61. Insuch the case, the first aspect can be utilized. Instead of forming theresinous member 61, grease or the like may be coated over the heat sinkmembers 53, 55 shown in FIG. 3.

The semiconductor module 1 of the second aspect shown in FIG. 14 isstructured to include an insulating heat sink plate 85 formed over theheat sink members 53, 55 of the semiconductor module shown in FIG. 3.The heat sink plate 85 is formed of a material such as ceramics. Thesecond aspect is possible to improve the heat radiation better than thefirst aspect.

The semiconductor module 1 of the third aspect shown in FIG. 15 includesthe heats ink member 53 covered with the resinous member 61 and the heatsink member 55 exposed to outside. Therefore, a plurality of heat sinkmembers include some heat sink member(s) exposed to outside. As thepower MOS chip 7 has a relatively large amount of heat radiation, theheat sink member 55 is exposed to outside. The heat sink member 53 iscovered with the resinous member 61 so that the power MOS chips 5 and 7can be prevented from short-circuiting with each other.

In the third aspect, the power MOS chip 7 is controlled to have athickness larger than that of the power MOS chip 5 to expose the heatsink member 55 to outside. Other than this part, the similarity is alsofound in the electrode 32 a on the mounting board, the connection member33, the electrode pads 39, 41, and the connection member 57. Forexample, the electrode 32 a corresponding to the power MOS chip 7 iscontrolled to have a height larger than that of the electrode 32 acorresponding to the power MOS chip 5. The thickness of the chip and theheight of the electrode may be controlled in combination or singly.

The semiconductor module 1 of the fourth aspect shown in FIG. 16comprises the heat sink members 53 and 55 exposed to outside, and theheat sink member 53 located on the lower surface of the power MOS chip 5has no terminal 59. Therefore, the heat sink member 53 can not serve asa wire.

Fifth Embodiment

FIG. 17 is a plan view of a semiconductor module 1 according to a fifthembodiment. FIG. 18 is a cross-sectional view taken along D1-D2 line inFIG. 17. A difference from the semiconductor module 1 of FIG. 1 lies inlocation of the outer edge of the solder resist 31. The fifth embodimentis described below in detail.

The mounting board 3 is similar to the mounting board 3 of the precedingembodiments and defined by sides 87, a surface 89 facing the chips 5, 7,9, and an opposite surface 91 located opposite to the surface 89. On theother hand, different from the preceding embodiments, the solder resist31 of the fifth, embodiment is sandwiched between the edge of theresinous member 61 and the facing surface 89. In addition, it is formedon the facing surface 89 along the edge of the resinous member 61 toprotrude beyond the resinous member 61. This is effective to prevent theresinous member 61 from flowing to the external terminal 27 at the timeof molding. This effect will be described further in the steps offabricating the semiconductor module 1 according to the fifthembodiment.

FIGS. 19-24 show the steps of fabricating the semiconductor module 1according to the fifth embodiment, in which the mounting board 3 andothers are shown in section. As shown in FIG. 19, the mounting board 3is prepared as including the wire 29, the electrodes 32 a, 32 b and soforth formed thereon. The wire 29 is covered with the solder resist 31,and the electrodes 32 a, 32 b are exposed. The mounting board 3 is sized11 mm long/wide.

As shown in FIG. 20, a process of printing is applied to supply theconnection member 33 onto the electrodes 32 a, 32 b. The connectionmember 33 is solder, specifically Sn10Pb90 solder. There are availablesolder materials such as Sn—Zn based solder and Sn—Bi based solder otherthan Sn—Pb based solder.

As shown in FIG. 21, a mounter (not shown) is employed to mount thechips 5, 7, 9 while the electrode pads 39, 41 on the power MOS chips 5,7 and the electrode pad on the drive IC chip 9 (not shown) are faced tothe electrode 32 a. The power MOS chip 5 is sized 2 mm long/wide and 250μm thick. The power MOS chip 7 is sized 3 mm×5 mm long/wide and 250 μmthick. The drive IC chip 9 is sized 2 mm long/wide and 200 μm thick.

The mounting board 3 with the chips mounted thereon is passed through areflow furnace to forms older joints. An example of the temperatureprofile on reflow heating is shown in FIG. 25. In the heating, thetemperature is elevated from room temperature to 180° C. in 60 secondsat a constant rate, then from 180° C. to 220° C. in 80 seconds slowly,and from 220° C. to 320° C. in 40 seconds at a constant rate. Such theprofile is employed.

After formation of the solder joints, the mounting board 3 with thesolder joints formed thereon is cleaned to remove the flux residue. Themounting board 3 is immersed, for example, into a commercially availableflux cleaning solution while an ultrasound of 45 kHz is applied for 10minutes to clean the flux residue.

As shown in FIG. 22, a dispenser is employed to supply an underfillmaterial 51 into spaces between the chips 5, 7, 9 and the mounting board3. The underfill material 51 is filled in the spaces by the capillaryphenomenon. The amount of filler in the underfill material 51 is smallin order to facilitate the capillary phenomenon to arise. Therefore, apercentage of the filler in the underfill material 51 is lower than thatof the resinous member 61. The underfill material is a resin as well.Accordingly, it can be said that, in the resin member composed of theresinous member 61 and the underfill material 51, the filler contents inthe portions located in the spaces between the chips 5, 7, 9 and themounting board 3 are less than those in other portions.

Thereafter, a thermal treatment is applied to cure the underfillmaterial 51. The above spaces may be filled with a resin for use inlater resin sealing. In this method, the underfill material may not beemployed if there is no problem about the property and reliability.

A dispense process is applied to supply the connection members 57 and 33on the lower surfaces of the chips 5, 7, 9 and the electrode 32 b. Thesolder material employed comprises Sn5Pb95 solder having a melting pointhigher than that of Sn10Pb90 solder of the connection member used in theflip-chip connection. The solder material may include a Sn—Pb—Ag series.The solder material to be supplied has a melting point higher than thatof the connection member used in the flip-chip connection. This reasonwill be described in the later paragraph associated with the primaryeffect of the fifth embodiment.

After the step of FIG. 22, a multi-functional mounter is employed tomount the heat sink members 53, 55 as shown in FIG. 23. A 200 μm thickcopper frame is employed as the heat sink members 53, 55.

The mounting board 3 with the heat sink members 53, 55 mounted thereonis passed through a reflow furnace to solder the heat sink members 53and 55. A heating profile herein is different from the preceding heatingprofile only in peak temperature and includes heating under thecondition of a peak temperature of 330° C. After the reflow, the fluxresidue is cleaned.

A molding step is executed as shown in FIG. 24 such that the cleanedmounting board 3 is provided in a mold 93 and a resin is applied to sealthe chips 5, 7, 9. Specifically, in the molding step, the cleanedmounting board 3 is provided in the mold 93 held at 180° C., and theresin is filled within the mold 93 in 10 seconds, then held for 60seconds within the mold 93 to cure the resin. Thereafter, the mountingboard 3 with the resin-sealed chips 5, 7, 9 is removed from the mold.

Usually, a number of mounting boards 3 are processed in a single sheetstate prior to the molding step. Therefore, dicing or stamping isapplied to form individual mounting boards 3 to finally complete thesemiconductor module.

Resin leakage may possibly arise on the other surface 65 (the surfaceexposed to outside) of the heat sink member 53, 55. The resin leakagecan be prevented by adhering a tape over whole of the other surface 65of the heat sink member 53, 55 prior to molding, then molding, andpeeling off the tape after the molding.

Primary effects of the fifth embodiment will be described. In the fifthembodiment, edges 95 that define an aperture of the mold 93 entirelymake contact with the solder resist 31. In a word, the edge 95 and thefacing surface 89 of the mounting board 3 sandwich the solder resist 31therebetween. The solder resist 31 is relatively flexible so that theedge 95 and the facing surface 89 create no gap therebetween. As aresult, the resin can be prevented from leaking to the external terminal27. The contact between the edge 95 and the solder resist 31 has a widthof 100 μm, for example.

As shown in FIG. 24, in the fifth embodiment, the connection member 57(an example of the first connection member) electrically connects thedrain electrode 43 on the lower surface of the power MOS chip 5, 7 withthe heat sink member 53, 55. The connection member 33 (the secondconnection member) electrically connects the gate electrode pad 39 andthe source electrode pad 41 on the upper surface of the power MOS chip5, 7 with the electrode 32 a on the mounting board 3. The connectionmember 57 (the example of the first connection member) is controlled tohave a melting point higher than that of the connection member 33 (thesecond connection member).

The connection members 33, 57 may be composed of the solder materialwith same composition (that is, the same melting point). In this case,during the reflow of the connection member 57 to connect the drainelectrode 43 on the power MOS chip 5, 7 with the heat sink member 53,55, the temperature is lowered down to room temperature after the moltenconnection member 57 is solidified. At this stage, a problem may ariseon the reliability of the connection member 33 (for example, bump open;the electrode pad 39, 41 being peeled off the connection member 33).This is caused when a distortion remains in the connection member 33 orwhen the connection member 33 cannot follow the deformation of the heatsink member 53, 55. In a word, as the joint area between the connectionmember 33 and the electrode pad 39, 41 is small, the above cause leavesbump open.

In the fifth embodiment, the melting point of the connection member 57is higher than that of the connection member 33. Accordingly, at thestage of lowering the temperature down to room temperature after themolten connection member 57 is solidified, the connection member 33 isnot yet solidified. Therefore, the above cause does not arise on theconnection member 33 and the bump open can be prevented. As a result,the fifth embodiment is possible to improve the reliability of theconnection member 33 and consequently the reliability of thesemiconductor package.

The fifth embodiment employs solder as the material of the connectionmember 33, 57 though it may employ a resin paste that contains a metalpowder. Alternatively, it may employ solder as the material of the oneconnection member and the resin paste as the material of the otherconnection member.

The present invention also includes embodiments shown in FIGS. 26-28,which correspond to FIG. 3. In a semiconductor module 1 of FIG. 26, nounderfill material 51 is provided in the spaces between the chips 5, 7,9 and the mounting board 3 and the resinous member 61 is filled in thatplaces instead.

The above spaces are narrow so that the resinous member 61 may not enterthe spaces on molding the resinous member 61, leaving air bubbles in theresinous member 61. Therefore, in the semiconductor module 1 of FIG. 3,the underfill material 51 is injected into the spaces prior to moldingin order to prevent generation of air bubbles.

Molding the resinous member 61 into the spaces between the chips 5, 7, 9and the mounting board 3 produces the semiconductor module 1 of FIG. 26.As a result, the step of injecting the underfill material can beomitted.

In a semiconductor module 1 shown in FIG. 27, the resinous member 61 andthe underfill material 51 are not provided. This is different from thesemiconductor module 1 shown in FIG. 3.

As the resinous member 61 is not provided, the power MOS chips 5, 7, thedrive IC chip 9 (not shown) and the heat sink members 53, 55 areentirely exposed. As the underfill material 51 is not provided, spacesare formed between these chips and the mounting board 3.

Even if the resinous member 61 and the underfill material 51 are notprovided, nothing may interfere with the use of the semiconductor moduledepending on the case. In such the case, the semiconductor module 1 ofFIG. 27 can be employed. For example, when the mounting board 3 is aceramic board, the mounting board 3 has a thermal expansion coefficientclose to those of the chips 5, 7. Therefore, even when heat radiationfrom the chips 5, 7 expands the mounting board 3 and the chips 5, 7, theconnection member 33 can be prevented from peeling off the electrodepads 39, 41. Thus, the reliability of the connection member 33 does notlower. In the semiconductor module 1 of FIG. 27, the resinous member 61and the underfill material 51 are not provided and accordingly the costfor manufacturing the semiconductor module can be lowered.

In a semiconductor module 1 of FIG. 28, the underfill material 51 isfilled in the spaces between the power MOS chips 5, 7 and the drive ICchip (not shown) and the mounting board 3. This is different from thesemiconductor module 1 of FIG. 27. Therefore, only the electrode 32 a onthe mounting board 3, the connection member 33, and the electrode pads39, 41 are sealed with resin.

Heat radiation from the chips 5, 7 causes thermal stresses toconcentrate on the locations of the gate electrode pad 39 and the sourceelectrode pad 41. The underfill material 51 can prevent the thermalstresses from causing the connection member 33 to peel off the electrodepads 39, 41.

Sixth Embodiment

FIG. 29 is a bottom view of a semiconductor module 1 according to asixth embodiment while FIG. 30 is a bottom view of the semiconductormodule 1 according to the fifth embodiment. The bottom corresponds tothe opposite surface 91 of the surfaces of the mounting board 3, whichlocates opposite to the surface facing the chips 5, 7, 9.

In the opposite surface 91, terminal plates 97 are formed extending fromthe external terminals 27. A terminal plate 97 is connected to a singleexternal terminal 27 only or to multiple external terminals 27 commonly.In the opposite surface 91, wires 29 are formed connecting the terminalplates 97 with each other. The wires 29 and the terminal plates 97 arecovered with the solder resist 31. In comparison with the wire 29 on thesemiconductor module 1 according to the fifth embodiment of FIG. 30, thewire 29 on the semiconductor module 1 according to the sixth embodimentof FIG. 29 is much wider. The wire 29 in FIG. 29 covers almost theregion corresponding to the chips 5, 7, 9 in the opposite surface 91.The wire 29 in FIG. 29 also serves as a step corrective section, whichis described below.

FIG. 31 is a cross-sectional view of the mounting board 3 and so forthhoused in the mold 93 prior to resin sealing, corresponding to FIG. 24.In FIG. 24 no step is formed in the opposite surface 91 while a step 99is formed in practice as shown in FIG. 31 for the following reason. Asshown in FIG. 30, for the wire 29 and the terminal plate 97, formationportions and non-formation portions are present in the opposite surface91. In this case, the solder resist 31 located on the non-formationportions differs in height from the solder resist 31 located on theformation portions. The wire 29 and the terminal plate 97 have athickness of 35 μm, for example, which makes the step 99 about 35 μmthick.

On molding in the presence of the step 99, pressure of the resininjected into the mold 93 distorts the mounting board 3 within the mold93 as shown in FIG. 32 and causes bump open and so forth, which lowerthe reliability of the semiconductor module. Even the step 99 about 18μm thick may cause such the problem.

To the contrary, in the semiconductor module 1 according to the sixthembodiment of FIG. 29, the wire 29 also serves as the step correctivesection to prevent the occurrence of the step in the solder resin 31. Asa result, the above distortion is prevented from arising on molding andthe reliability of the semiconductor module can be improved accordingly.

Like in a modification of the sixth embodiment shown in FIG. 33, a dummywire 101 may be formed in the step corrective section. The dummy wire101 is formed at the same time with the wire 29 and has the samethickness as that of the wire. Therefore, the dummy wire 101 can alsoprevent the occurrence of the step in the solder resin 31. The dummywire 101 is not connected to any wires.

Seventh Embodiment

FIG. 34 is a plan view of an upper surface 45 of the power MOS chip 5provided in a semiconductor module according to a seventh embodiment. Inthe upper surface 45, a single gate electrode pad 39 and a number ofsource electrode pads 41 are formed. The gate electrode pad 39 serves asa lead electrode from the trench gate 17 of FIG. 4. The source electrodepads 41 serves as lead electrodes from the source electrodes 24 of FIG.4, which are an example of the first main electrodes. In thisembodiment, the drain electrode 43 of FIG. 4 is the second electrode.

The heat on molding extends the mounting board 3. The influence from theextension becomes lager as closing to the corner. Therefore, theelectrode pad located in the corner is easily made bump open due tothermal stresses. Normally, the gate electrode pad 39 is formed at thecorner in the upper surface 45. As the gate electrode pad 39 is single,an occurrence of bump open results in a failed semiconductor module.

In the seventh embodiment, a source electrode pad 41 is formed aroundthe gate electrode pad 39. Therefore, the gate electrode pad 39 is notlocated in the corner and it is possible to prevent thermal stressesfrom causing bump open associated with the gate electrode pad 39.

Eighth Embodiment

FIG. 35 is a plan view of a semiconductor module 1 according to aneighth embodiment. FIG. 36 is a cross-sectional view taken along E1-E2line in FIG. 35 while FIG. 37 is a cross-sectional view taken alongF1-F2 line in FIG. 35. The eighth embodiment differs from the secondembodiment of FIG. 8 mainly in that the heat sink members 53 and 55 arelinked to each other to configure a single heat sink plate 103.

The power MOS chip 5 (an example of the first power MIS chip) has anupper surface with a drain electrode pad 105 and a gate electrode pad107 formed thereon and a lower surface with a source electrode 109formed thereon. On the other hand, the power MOS chip 7 (an example ofthe second power MIS chip) has a source and a drain arranged inverselyin comparison with the power MOS chip 5. In a word, the power MOS chip 7had an upper surface with a source electrode pad 111 and a gateelectrode pad 113 formed thereon and a lower surface with a drainelectrode 115 formed thereon.

The following description is given to the respective structures of thepower MOS chips 5, 7 according to the eighth embodiment. FIG. 38 is across-sectional view of part of the power MOS chip 5 according to theeighth embodiment. The chip 5 comprises a silicon substrate 117 and anepitaxial layer or p⁻-type base region 119 formed thereon. The siliconsubstrate 117 serves as a p⁺-type source region. The silicon substrate117 has a lower surface entirely in contact with a source electrode 109.

In the base region 119, an n⁺-type drain region 121 and an n⁻-type driftregion 123 are formed adjacent to each other. An n⁺-type source region125 is formed in the base region 119 apart from the drift region 123,interposing an interval therebetween. A gate 127 is formed on a gateoxide film above a location between the drift region 123 and the sourceregion 125. The gate 127 is operative to form a channel in the baseregion 119. Through the channel and the drift region 123, the drainregion 121 and the source region 125 are brought into conduction.

Adjacent to the source region 125, a p⁺-type conductive region 129 isformed passing through the base region 119 and reaching the siliconsubstrate 117. The conductive region 129 and the source region 125 areelectrically connected with each other via a short electrode 131. Thus,the source region 125 and the base region 119 are short-circuited.

An interlayer insulator 133 is formed covering the gate 127 and theshort electrode 131. A drain electrode 135 is formed on the interlayerinsulator 133. The drain electrode 135 makes contact with the drainregion 121 via a contact hole formed through the interlayer insulator133.

The power MOS chip 5 having the above structure is of the so-calledlateral type that allows current to flow in a direction parallel to theupper surface of the chip. To the contrary, the power MOS chip 7 is ofthe so-called vertical type that allows current to flow in a directionperpendicular to the upper surface of the chip. FIG. 39 is across-sectional view of part of the power MOS chip 7 according to theeighth embodiment. The chip 7 includes an n⁺-type silicon substrate 137and an epitaxial layer or n⁻-type drift region 139 formed thereon. Thesilicon substrate 137 serves as an n⁺-type drain region. The siliconsubstrate 137 has a lower surface entirely brought into contact with thedrain electrode 115. The drift region 139 has a current path extendingin a direction perpendicular to the upper surface of the siliconsubstrate 137.

A plurality of p-type base regions 141 are formed at intervals in thedrift region 139. In each base region 141, n⁺-type source regions 143are formed spaced from each other. A gate 145 is formed on a gate oxidefilm between the base regions 141. The gate 145 is operative to form achannel in the base region 141. Through the channel, the source region143 and the drain region 139 are brought into conduction.

An interlayer insulator 147 is formed covering the gate 145. A sourceelectrode 149 is formed on the interlayer insulator 147. The sourceelectrode 149 makes contact with the source region 143 and the baseregion 141 via a contact hole formed through the interlayer insulator147.

As shown in FIG. 3, in the preceding embodiments, the source electrodepad 41 on the power MOS chip 5 is connected to the drain electrode 43 onthe power MOS chip 7 via the connection member 33, the wire 29, theconnection member 33, the terminal 59 and the heat sink member 55. Tothe contrary, in the eighth embodiment, the source electrode pad 109 onthe power MOS chip 5 is connected to the drain electrode 115 on thepower MOS chip 7 via the heat sink plate 103. Therefore, the eighthembodiment is possible to shorten the current path to reduce the wireresistance and reduce the parasitic inductance on the current path.Accordingly, it is possible to provide a high-efficiency electronicdevice (such as a DC-DC converter) that incorporates the semiconductormodule according to the eighth embodiment therein.

Ninth Embodiment

FIG. 40 is a cross-sectional view of a semiconductor module 1 accordingto a ninth embodiment, from which the sectional structure and thestructure of the lower surface of the mounting board 3 are omitted. Thesemiconductor module 1 according to the ninth embodiment is similar tothe semiconductor module 1 according to the eighth embodiment shown inFIGS. 35-37 because the heat sink members 53, 55 are liked together toconfigure a single heat sink plate 103. The lower surfaces of the powerMOS chips 5, 7 are electrically connected to each other via the heatsink plate 103.

On the other hand, the power MOS chips 5, 7 according to the ninthembodiment differ in structure from those according to the eighthembodiment. The power MOS chip 5 is of the P-channel type while thepower MOS chip 7 is of the N-channel type. On the upper surface of thepower MOS chip 5, 7, a gate electrode pad 151, a source electrode pad153 and a drain electrode pad 155 are formed. A connection conductor 157is formed through the chip 5, 7. The drain electrode pad 155 iselectrically connected to a drain electrode 159 on the lower surface ofthe chip 5, 7 via the connection conductor 157. The electrode pads 151,153, 155 are connected to the electrode 32 a on the mounting board 3 bythe connection member 33. The electrode pads 151, 153, 155 may beprovided with a bump electrode formed thereon. In this case, theelectrode pads 151, 153, 155 are connected to the electrode 32 a via thebump electrode and the connection member 33.

In the ninth embodiment, the output VOUT from the semiconductor module 1shown in FIG. 5 can be led out through the following two current paths.One is a current path including the heat sink plate 103, the terminal ofthe heat sink member, and the wire on the mounting board 3. Another is acurrent path including the heat sink plate 103, the connection conductor157, the drain electrode pad 155, the connection member 33, and the wireon the mounting board 3.

As the drain electrode pad 155 is formed on the upper surface of thepower MOS chip 5, 7 the heat sink plate 103 may be isolated from thechip 5, 7. Alternatively, the heat sink plate 103 itself may be composedof an insulator. In these cases, it is possible to omit measures forinsulation of the heat sink plate 103 from outside, which otherwise theuser must implement, if required. In additional, it is possible tosuppress EMI or the like. Such the insulation reduces the wireresistance and inductance even though both the power MOS chips 5, 7 areof the N-channel type. In these cases, the drain electrodes 159 on thepower MOS chips 5, 7 are electrically connected via the wire formed onthe mounting board 3.

FIG. 41 is a cross-sectional view of part of the power MOS chip 7provided in the ninth embodiment. The chip 7 has a structure similar tothat of the power MOS chip 7 in FIG. 39 except the connection conductorand the vicinity thereof. In the ninth embodiment, the source electrode153 is an example of the first main electrode while the drain electrode159 is an example of the second main electrode.

A through-hole 161 is formed in the chip 7 extending from the uppersurface to the lower surface of the power MOS chip 7. The through-hole161 has a diameter of 10 μm or larger. A connection conductor 157 isburied in the through-hole 161. The connection conductor 157 is formedby, for example, plating Cu in the through-hole 161. As the diameter ofthe through-hole 161 is 10 μm or larger, the connection conductor 157becomes relatively thick. Therefore, the resistance of the connectionconductor 157 can be made smaller than the resistance when the drainelectrode is connected to the electrode on the mounting board 3 using abonding wire or the like instead of the connection conductor 157. Theconnection conductor 157 makes contact with the drain electrode 159having a thickness of 5 μm or larger. As the thickness is 5 μm orlarger: (1) it can lower the resistance on the current path extendingfrom the n⁺-type silicon substrate 137 through the drain electrode 159to the connection conductor 157; and (2) it can be employed as a stopperon formation of the through-hole 161 passing through the silicon layer.

In the upper surface of the power MOS chip 7, an n⁺-type impurity region163 is formed surrounding the connection conductor 157. The impurityregion 163 prevents a depletion layer extending from the p-base region141 from reaching the connection conductor 157. In a word, the impurityregion 163 keeps non-conduction between the p-base region 141 and thedrain electrode 159. This non-conduction may also be kept by formationof an insulating layer on the upper surface of the through-hole 161. Inthis case, even if the depletion layer reaches the insulating layer onthe upper surface of the through-hole 161, conduction between the p-baseregion 141 and the drain electrode 159 can not be establishedimmediately. Therefore, it is possible to reduce the distance betweenthe through-hole 161 and the p-base region 141 by design and accordinglyreduce the chip area. The power MOS chip 5 according to the ninthembodiment has a structure with reverse conduction types of parts inFIG. 41.

In the ninth embodiment, both the drain electrode and the sourceelectrode are led out to the upper surfaces of the chips 5, 7.Accordingly, the distance between the drain electrode and the wire 29 onthe mounting board 3 can be shortened to reduce the wire resistance onthe current path. On the mounting board 3, the distance between the wire29 connected to the source electrode and the wire 29 connected to thedrain electrode can be shortened to reduce the parasitic inductance onthe current path.

In the ninth embodiment the MOSFET is of the planar type though it maybe of the trench type. The trench type is possible to lower theresistance of the MOSFET itself so that the resistance of the circuit inthe semiconductor module can be lowered further.

The ninth embodiment can shorten the current path, similar to the eighthembodiment. Therefore, it is possible to lower the wire resistance andlower the parasitic inductance on the current path. Accordingly, it ispossible to provide a high-efficiency electronic device (such as a DC-DCconverter) that incorporates the semiconductor module according to theninth embodiment therein,

Tenth Embodiment

FIG. 42 is a plan view of a semiconductor module 1 according to a tenthembodiment and FIG. 43 is a cross-sectional view taken along G1-G2 linein FIG. 42. In the tenth embodiment, in addition to the secondembodiment shown in FIG. 8, decoupling condensers 165, 167, 169(hereinafter also referred to as condensers) are built in thesemiconductor module 1. These condensers are operative to cancel thewire inductance between the supply terminals and the ground terminals inthe semiconductor module 1 and connected between the supply terminalsand the ground terminals.

The condenser 165, 167, 169 may be located on the mounting board 3 whilein the structure of the tenth embodiment the condenser 165, 167, 169 ispartly embedded in a recess 171 of the mounting board 3 as shown in FIG.43. As the condenser 165, 167, 169 has relatively large dimensions, ifit is located on the mounting board 3, the semiconductor module 1 isstructured to protrude from the location of the condenser 165, 167, 169.Formation of the condenser 165, 167, 169 in the recess 171 can lower theheight of the location such that the heat sink members 53, 55 can extendover the condensers 165, 167, 169. Therefore, it is possible to enlargethe area of the heat sink member 53, 55 to improve the heat radiation.

The following description is given to the supply terminals and theground terminals connected to the condensers 165, 167, 169. FIG. 44 is acircuit diagram of the semiconductor module 1 according to the tenthembodiment. FIG. 45 shows external terminals related to condensers onthe semiconductor module 1 according to the tenth embodiment. The tenthembodiment provides three decoupling condensers instead of sharing onefor the reason described below.

A power IC circuit includes a first block in which large current flowsand a second block in which current slightly or hardly flows.Commonality of the ground terminals in the first and second blocksallows large current to flow from the first block to the ground wire inthe second block in which current slightly or hardly flows. Accordingly,the second block suffers the influence of the resultant voltage drop.Therefore, the ground terminals are divided between the first block andthe second block to prevent the above influence. The ground terminal inthe first block is referred to as a PGND (power ground) terminal whilethe ground terminal in the second block is referred to as a SGND (signalground) terminal.

The circuit including the power MOS chips 5, 7 corresponds to the firstblock while the circuit including the drive IC chip 9 corresponds to thesecond block. Therefore, it is required to provide two condensers. Thedrive IC chip 9 may also be divided into the first and second blocks. Ina word, the drive IC chip 9 can be divided into a gate driver 173operative to drive the gates of the power MOS chips 5, 7 and a signaltransmitter 175 operative to transmit signals from external to the gatedriver 173. The signal transmitter 175 has an arithmetic function inaddition to the signal transmission. A relatively large current flows inthe gate driver 173 while current hardly flows in the signal transmitter175. Thus, the ground terminal in the gate driver 173 is separated fromthe ground terminal in the signal transmitter 175.

The ground terminals therefore include three types: the PGND terminal orthe ground terminal in the circuit including the power MOS chips 5, 7;an IC-PGND terminal or the ground terminal in the gate driver 173; andthe SGND terminal or the ground terminal in the signal transmitter 175.The condenser 165 is connected between a VIN terminal or the supplyterminal in the circuit including the power MOS chips 5, 7 and the PGNDterminal. The condenser 169 is connected between a VDD terminal or thesupply terminal in the gate driver 173 and the IC-PGND terminal. Thecondenser 167 is connected between the VDD terminal or the supplyterminal in the signal transmitter 175 and the SGND terminal.

In the tenth embodiment, the decoupling condensers 165, 167, 169 arecontained in the semiconductor module 1. Therefore, the wire connectingthe supply terminal with the ground terminal can be made shorter andaccordingly the wire inductance can be made lower than when thesecondensers are connected to the semiconductor module 1 externally.

Eleventh Embodiment

FIG. 46 is a plan view of a semiconductor module 1 according to aneleventh embodiment. FIG. 47 is a cross-sectional view taken along H1-H2line in FIG. 46. FIG. 48 is a bottom view of the semiconductor module 1in FIG. 46. The eleventh embodiment further defines the locations of thesupply terminals and the ground terminals in the first embodiment shownin FIG. 1.

The external terminals 27 located on a first side 177 of the mountingboard 3 are all assigned to the VIN terminal in the circuit includingthe power MOS chips 5, 7. The external terminals 27 located on a secondside 179 adjacent to the first side 177 are all assigned to the PGNDterminal in the above circuit. The external terminals 27 located on athird side 181 opposite to the first side 177 of the mounting board 3are partly assigned to the VOUT terminal shown in FIG. 44. The externalterminals 27 located on the remaining final fourth side 183 are assignedto the IC-PGND terminal, the VDD terminal, the SGND terminal and others.These terminals are described earlier in the tenth embodiment.

Different from the tenth embodiment, in the eleventh embodiment, thedecoupling condensers are attached to the semiconductor module 1externally. For example, as shown in FIG. 48, the decoupling condenser165 is externally connected between the VIN terminal and the PGNDterminal.

The VIN terminal is located on the first side 177 while the PGNDterminal is located on the second side 179. In a word, these terminalsare located on two adjacent sides. Therefore, even if the decouplingcondenser is externally connected, the wire connecting the VIN terminalwith the PGND terminal can be shortened to reduce the wire inductance.

There are two current paths in the circuit including the chips 5, 7 asshown in FIG. 47. One is a current path (1) of VIN terminal→VOUTterminal while another is a current path (2) of PGND terminal→VOUTterminal.

As the VOUT terminal is located on the third side 181, the current path(1), (2) can be made shorter than when located on the fourth side 183.Three terminals 59, provided in the circuit including the chips 5, 7,are aligned inline. Therefore, the current path (1) can be made shorter.In the rectangular chip 7, the terminals 59 are located on two oppositelonger sides. Therefore, the current path (1) can be made shorter thanwhen located on two opposite shorter sides.

As described above, the eleventh embodiment is possible to shorten thewire connecting the VIN terminal with the PGND terminal and shorten thecurrent path. Accordingly, it is possible to provide a high-efficiencyelectronic device that incorporates the semiconductor module accordingto the eleventh embodiment therein.

Twelfth Embodiment

FIG. 49 is a plan view of a semiconductor module 1 according to atwelfth embodiment. The twelfth embodiment is provided with n power MOSchips 5, 7 (chips 5-1 to 5-n and chips 7-1 to 7-n: n is a plurality).Depending on the value of current flowing in the load under the controlof the semiconductor module 1, the number of the power MOS chips 5, 7driven by the drive IC chip 9 is varied. This is a major characteristic.

FIG. 50 is a circuit diagram of a DC-DC converter 67 containing thesemiconductor module 1 according to the twelfth embodiment. The DC-DCconverter 67 of FIG. 50 further comprises a load current detector 185operative to detect current flowing in the load CPU 75 in addition tothe DC-DC converter 67 of FIG. 5. The semiconductor module 1 comprises npower MOS chips 5, 7 and the drive IC chip 9.

The drive IC chip 9 includes high-potential and low-potential drivenchip number decision tables 187, 189; high-potential and low-potentialdriven chip number switchers 191, 193; and high-potential andlow-potential chip drivers 195-1 to 195-n, 197-1 to 197-n. The chipdrivers correspond to the respective chips.

Pieces of data on the number of chips driven in response to the loadcurrent are stored in the tables 185, 187. The data are previouslydetermined in consideration of the on-resistance, the gate capacitanceand the number of the power MOS chip 5, 7. The value of the load currentdetected by the load current detector 185 is compared with the data inthe table 187, 189 to decide a certain number of chips actually driven.

On the basis of this decision, the driven chip number switchers 191, 193operate a certain number of chip drivers of the chip drivers 195-1 to195-n, 197-1 to 197-n to drive a certain number of power MOS chips onthe high-potential side and the low-potential side.

A major effect of the twelfth embodiment is described. Losses in asynchronous commutation step-down DC-DC converter include a steady-stateloss caused by the on-resistance of the power MOS chip and other losses(such as a switching loss and a gate charge loss). The loss in the largecurrent operation of the DC-DC converter mainly belongs to thesteady-state loss while the loss in the small current operation mainlybelongs to the other losses. Therefore, it is effective to reduce thesteady-state loss in the large current operation of the DC-DC converterwhile it is effective to reduce the other losses in the small currentoperation.

A reduction in steady-state loss can be achieved by a loweredon-resistance of MOS. A reduction in other losses can be achieved by alowered gate capacitance. An increased area of the power MOS chip canlower the on-resistance of MOS but results in an increased gatecapacitance. To the contrary, a decreased area of the power MOS chip canlower the gate capacitance but results in an increased on-resistance ofMOS.

Therefore, it is advantageous to increase the area of the power MOS chipin the large current operation and decrease the area of the power MOSchip in the small current operation. In the twelfth embodiment, thenumber of the driven power MOS chips 5, 7 is varied based on the valueof current flowing in the load to adjust the area of the power MOS chip5, 7. In a word, the number of the driven power MOS chips 5, 7 isincreased in the large current operation and decreased in the smallcurrent operation. Accordingly, in the twelfth embodiment, the DC-DCconverter can operate efficiently regardless of the large currentoperation and the small current operation.

Thirteenth Embodiment

A thirteenth embodiment is directed to a speaker driver applicable toFDA (Full Digital Audio). FIG. 51 is a circuit diagram of the speakerdriver 199 according to the thirteenth embodiment. The power MOS chips5, 7, the drive IC chip 9 and a low-pass filter 201 composed of L and Care contained in a set 203. Two such sets 203 correspond to a channel(speaker).

A state of MOS1 (chip 5) and MOS4 (chip 7) kept on and MOS2 (chip 7) andMOS3 (chip 5) kept off and a state of MOS1 and MOS4 kept off and MOS2and MOS3 kept on are alternately repeated to drive the speaker 205. Ingeneral, MOS1, MOS2, MOS3 and MOS4 employ chips having the sameproperty. Therefore, as shown below, the chip 5 and the chip 7 are sizedsimilarly and both shaped square.

For configuration of the speaker driver of FIG. 51 with thesemiconductor module(s), the following two ways can be considered. Oneis the use of a semiconductor module 1 (half-bridged) that includes oneset 203 mounted thereon as shown in FIG. 52. In this case, two suchsemiconductor modules 1 are required. Another is the use of asemiconductor module 1 (full-bridged) that includes two sets 203 mountedthereon as shown in FIG. 53. In this case, a single semiconductor module1 configures the speaker driver 199. In either case, the low-pass filter201 is not depicted. In one set 203, the drive IC chip 9 is locatedequidistant from the power MOS chip 5 and the power MOS chip 7.

Similar to the eleventh embodiment shown in FIG. 46, location of the VINterminal adjacent to the PGND terminal shortens the length of the wireassociated with the decoupling condenser attached externally. The chips5, 7, 9 are arranged such that the wires connected to the gates of thepower MOS chips 5, 7 from the drive IC chip 9 are shortened.

1-20. (canceled)
 21. A semiconductor module, comprising: a mountingboard; a plurality of power switching device chips each having an uppersurface and a lower surface and mounted on said mounting board byflip-chip bonding with said upper surface faced toward said mountingboard; a drive IC chip mounted on said mounting board by flip-chipbonding and operation to drive gates of transistors formed in saidplurality of power switching device chips; a plurality of heat sinkmembers located respectively on said lower surfaces of said plurality ofpower switching device chips; a resinous member provided to seal saidplurality of power switching device chips and said drive IC chip in asingle package; and a power source terminal and a ground terminal of acircuit configured by said plurality of power switching device chips,wherein said power source terminal is located at one of two adjacentsides of said mounting board, and said ground terminal is located at theother side; and wherein said heat sink member services as a wire thatconnects said power switching device and said mounting board.
 22. Thesemiconductor module according to claim 21, further comprising: abuilt-in decoupling condenser connected between said power sourceterminal and said ground terminal.
 23. The semiconductor moduleaccording to claim 22, wherein said mounting board includes a recess forembedding said decoupling condenser.
 24. The semiconductor moduleaccording to claim 22, wherein said drive IC chip includes a gate driverand a signal transmitter transmitting a signal from outside to said gatedriver; wherein said power source terminal includes a VDD terminal as apower source terminal of said drive IC chip; and a VIN terminal as apower source terminal of a circuit configured by said plurality of powerswitching device chips; wherein said ground terminal includes an IC-PGNDterminal as a ground terminal of said gate driver, a SGND terminal as aground terminal of said signal transmitter, and a PGND terminal as aground terminal of a circuit configured by said plurality of powerswitching device chips; and wherein said decoupling condenser includes afirst decoupling condenser connected between said VDD terminal and saidIC-PGND terminal, a second decoupling condenser connected between saidVDD terminal and said SGND terminal, and a third decoupling condenserconnected between said VIN terminal and said PGND terminal.
 25. Thesemiconductor module according to claim 21, wherein said mounting boardis defined by sides, a surface facing said plurality of power switchingdevice chips and said drive IC chips, and an opposite surface locatedopposite to the surface; and wherein said mounting board includes a wireformed at said opposite surface, a step corrective section formed at aregion at said opposite surface corresponding to said chips and havingthe same thickness as said wire.
 26. The semiconductor module accordingto claim 25, wherein said step corrective section is formed by expandingthe width of said wire.
 27. The semiconductor module according to claim25, wherein said step corrective section comprises a dummy wire.
 28. Thesemiconductor module according to claim 21, wherein said power sourceterminal is a VIN terminal of a circuit configured by said plurality ofpower switching device chips; wherein at the opposite side of said VINterminal at the mounting board is provided a VOUT terminal as an outputterminal of the circuit configured by said plurality of power switchingdevice chips; wherein said plurality of heat sink members haverespective terminals electrically connected to electrodes on saidmounting board and are electrically connected to said lower surfaces ofsaid plurality of power switching device chips; and wherein saidterminals are aligned in line along the direction from said VIN terminalto said VOUT terminal.
 29. The semiconductor module according to claim28, wherein at least one of said plurality of power switching devicechips is rectangular in shape; wherein a heat sink member correspondingto said rectangular chip has terminals electrically connected toelectrodes on said mounting board and is electrically connected to saidlower surface of said rectangular chip; and wherein said rectangularchip has two opposite longer sides on which said terminals are arranged.30. The semiconductor module according to claim 28, wherein at least oneof said plurality of heat sink members has a plurality of portions fixedon said mounting board.
 31. The semiconductor module according to claim28, wherein said plurality of heat sink members include a heat sinkmember having a plurality of portions fixed on said mounting board and aheat sink member having a single portion fixed on said mounting board.32. The semiconductor module according to claim 28, wherein saidplurality of heat sink members have respective terminals electricallyconnected to electrodes on said mounting board and are electricallyconnected to said lower surfaces of said plurality of power switchingdevice chips; wherein said plurality of heat sink members include a heatsink member having two portions fixed on said mounting board; andwherein said terminals of said heat-sink members are electricallyconnected to said electrodes on said mounting board at said twoportions.